类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 输入电压-Nom | 配置 | 行间距 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 输出电流-最大值 | 晶体管应用 | 输入电压(最大) | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | DMC3018LSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 21 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 850.995985mg | SILICON | 9.1A 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.5W | DUAL | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | 2.5W | N and P-Channel | SWITCHING | 20m Ω @ 6.9A, 10V | 2.1V @ 250μA | 631pF @ 15V | 12.4nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 6A | 20V | 9.1A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5.3mm | 4.1mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSZ0909NDXTMA1 | Infineon Technologies | 数据表 | 26 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 8-PowerVDFN | YES | SILICON | 20A Tc | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 雪崩 额定 | 无铅 | 未说明 | 未说明 | S-PDSO-N8 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 17W | 2 N-Channel (Dual) | 18m Ω @ 9A, 10V | 2V @ 250μA | 360pF @ 15V | 2.6nC @ 4.5V | 30V | 4.1A | 0.025Ohm | 40A | 30V | 4 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN63D8LDW-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 300mW | 鸥翼 | 260 | 40 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.3 ns | 2 N-Channel (Dual) | SWITCHING | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 22pF @ 25V | 870nC @ 10V | 3.2ns | 30V | 6.3 ns | 220mA | 20V | 0.22A | 4.5Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD85312Q3E | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 5 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 雪崩 额定 | 2.5W | 无铅 | 260 | 未说明 | CSD85312 | COMPLEX | 增强型MOSFET | 2.5W | 11 ns | 2 N-Channel (Dual) Common Source | SWITCHING | 12.4m Ω @ 10A, 8V | 1.4V @ 250μA | 2390pF @ 10V | 15.2nC @ 4.5V | 27ns | 20V | 6 ns | 39A | 10V | 20V | 76A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 5V Drive | 40 pF | 3.3mm | 3.3mm | 900μm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG1026UV-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 26.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 580mW | FLAT | 260 | 40 | DMG1026 | 6 | Dual | 增强型MOSFET | 6.5W | 3.4 ns | 2 N-Channel (Dual) | SWITCHING | 1.8 Ω @ 500mA, 10V | 1.8V @ 250μA | 32pF @ 25V | 0.45nC @ 10V | 3.4ns | 60V | 16.3 ns | 410mA | 20V | 0.38A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS8090 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 250mg | SILICON | 2 | 17.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.2W | R-PDSO-N4 | Dual | 增强型MOSFET | 59W | DRAIN | 10.6 ns | 2 N-Channel (Dual) | SWITCHING | 13m Ω @ 10A, 10V | 4V @ 250μA | 1800pF @ 50V | 27nC @ 10V | 4.6ns | 100V | 4 ns | 10A | 20V | 40A | 0.013Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 5mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC4C002NLTDG | ON Semiconductor | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 23 hours ago) | 表面贴装 | 8-XFBGA, WLCSP | 150°C TJ | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | 2.6W | 2 N-Channel (Dual) Common Drain | 2.2V @ 1mA | 6200pF @ 15V | 45nC @ 4.5V | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMC4559DN8TA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 3.6A 2.6A | 2 | 35 ns | -55°C~150°C TJ | Cut Tape (CT) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 105mOhm | Matte Tin (Sn) | 2.1W | 鸥翼 | 260 | 4.7A | 40 | 8 | 2 | Dual | 增强型MOSFET | 2.1W | 3.5 ns | 1.25W | N and P-Channel | SWITCHING | 55m Ω @ 4.5A, 10V | 1V @ 250μA (Min) | 1063pF @ 30V | 20.4nC @ 10V | 4.1ns | N-CHANNEL AND P-CHANNEL | 10 ns | 4.7A | 1V | 20V | 3.6A | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMG8601UFG-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Gold | 表面贴装 | 表面贴装 | 8-PowerUDFN | 8 | SILICON | 2 | 562 ns | -55°C~150°C TJ | Cut Tape (CT) | 2011 | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | HIGH RELIABILITY | 920mW | 无铅 | 260 | 40 | DMG8601UFG | 8 | R-PDSO-N5 | 不合格 | 2 | 增强型MOSFET | 53 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 23m Ω @ 6.5A, 4.5V | 1.05V @ 250μA | 143pF @ 10V | 8.8nC @ 4.5V | 78ns | 20V | 234 ns | 6.1A | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMB2308PZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | 12.0024mg | SILICON | 2 | 74 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8541.29.00.95 | 2.2W | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 14 ns | 800mW | 2 P-Channel (Dual) Common Drain | 36m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 3030pF @ 10V | 30nC @ 10V | 33ns | 20V | 58 ns | 7A | MO-229 | 12V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 510 pF | 725μm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4813 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 8 | EAR99 | ULTRA-LOW RESISTANCE | 2W | 鸥翼 | 8 | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 25m Ω @ 7.1A, 10V | 2.5V @ 250μA | 1250pF @ 15V | 19nC @ 10V | 30V | 7.1A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 175 pF | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMHC3F381N8TC | Diodes Incorporated | 数据表 | 5 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 30 ns | 4 | 3.98A 3.36A | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 55mOhm | Matte Tin (Sn) | 870mW | DUAL | 鸥翼 | 260 | 40 | ZXMHC3F381 | 8 | 增强型MOSFET | 1.35W | 1.9 ns | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 33m Ω @ 5A, 10V | 3V @ 250μA | 430pF @ 15V | 9nC @ 10V | 3ns | 30V | N-CHANNEL AND P-CHANNEL | 21 ns | 3.36A | 1V | 20V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
NDS8947 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 4A | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | 65mOhm | -30V | 900mW | 鸥翼 | -4A | 6.3 mm | Dual | 增强型MOSFET | 2W | 9 ns | 2 P-Channel (Dual) | SWITCHING | 65m Ω @ 4A, 10V | 2.8V @ 250μA | 690pF @ 15V | 30nC @ 10V | 20ns | 30V | 19 ns | -4A | -1.6V | 20V | 4A | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.6 V | 4.05mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQS4900TF | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 1.3A 300mA | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | QFET® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 2W | DUAL | 鸥翼 | 未说明 | 未说明 | FQS4900 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 550m Ω @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | 25ns | 60V 300V | N-CHANNEL AND P-CHANNEL | 47 ns | 1.3A | 20V | 0.65Ohm | -300V | 5.2A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FDC6310P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 10 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 125MOhm | Tin (Sn) | -20V | 960mW | 鸥翼 | -2.2A | Dual | 增强型MOSFET | 960mW | 9 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 125m Ω @ 2.2A, 4.5V | 1.5V @ 250μA | 337pF @ 10V | 5.2nC @ 4.5V | 12ns | 20V | 12 ns | 2.2A | -1V | 12V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C650NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 21A Ta 111A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | not_compliant | 未说明 | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | 4.2m Ω @ 20A, 10V | 2.2V @ 98μA | 2546pF @ 25V | 16nC @ 4.5V | 60V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP3098LSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 17.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.8W | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | 1.8W | 6 ns | 2 P-Channel (Dual) | SWITCHING | 65m Ω @ 5A, 10V | 2.1V @ 250μA | 336pF @ 25V | 7.8nC @ 10V | 5ns | 30V | 5 ns | 4.4A | 20V | 0.065Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5.3mm | 4.1mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
EM6K34T2CR | ROHM Semiconductor | 数据表 | 199800 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 150°C TJ | Cut Tape (CT) | yes | 活跃 | 1 (Unlimited) | 120mW | 未说明 | 未说明 | 120mW | 2 N-Channel (Dual) | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 26pF @ 10V | 50V | 200mA | Logic Level Gate, 0.9V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN3032LFDB-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | 6.2A | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 1W | 1W | 2 N-Channel (Dual) | 30mOhm @ 5.8A, 10V | 2V @ 250μA | 500pF @ 15V | 10.6nC @ 10V | 30V | 6.2A | 500pF | Standard | 30 mΩ | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2014LHAB-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | 7 | 9A | 40.9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 800mW | 260 | 30 | 6.9 ns | 2 N-Channel (Dual) Common Drain | 13m Ω @ 4A, 4.5V | 1.1V @ 250μA | 1550pF @ 10V | 16nC @ 4.5V | 15.5ns | 20V | 12 ns | 9.3A | 12V | 逻辑电平门 | 600μm | 3.05mm | 2.05mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5873NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | 表面贴装 | 8-PowerTDFN | YES | 8 | 37.393021mg | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 3.1W | FLAT | 8 | AEC-Q101 | R-PDSO-F6 | Dual | 增强型MOSFET | 3.1W | DRAIN | 2 N-Channel (Dual) | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 无卤素 | 1560pF @ 25V | 30.5nC @ 10V | 60V | 10A | 20V | 0.013Ohm | 60V | 190A | 40 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87351Q5D | Texas Instruments | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | Military grade | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 9 | EAR99 | 12W | 260 | 1 | 1.27mm | CSD87351 | 9 | 12V | 开关控制器 | Dual | 12W | 2 N-Channel (Dual) | 96A | 27V | 7.6m Ω @ 20A, 8V | 2.1V @ 250μA | 1255pF @ 15V | 7.7nC @ 4.5V | 16ns | 30V | 2.1 ns | PUSH-PULL | 32A | 8V | 1500kHz | 30V | 逻辑电平门 | 2.1 V | 5mm | 6mm | 1.5mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN66D0LDW-7 | Diodes Incorporated | 数据表 | 799 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SOT-363 | 6.010099mg | 115mA Ta | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 250mW | 2 | Dual | 250mW | 10 ns | 250mW Ta | 2 N-Channel (Dual) | 6Ohm @ 115mA, 5V | 2V @ 250μA | 23pF @ 25V | 60V | 115mA | 20V | 60V | 23pF | Standard | 6Ohm | 5 Ω | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C680NLT1G | ON Semiconductor | 数据表 | 1500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-PowerTDFN | 7.5A Ta 26A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | not_compliant | 未说明 | 3W Ta 19W Tc | 2 N-Channel (Dual) | 28m Ω @ 5A, 10V | 2.2V @ 13μA | 350pF @ 25V | 2nC @ 4.5V | 60V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVDD5894NLT4G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | LIFETIME (Last Updated: 11 hours ago) | 表面贴装 | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 5 | 329.988449mg | 14A | 36 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin (Sn) | 3.8W | not_compliant | 12.4 ns | 2 N-Channel (Dual) Common Drain | 10m Ω @ 50A, 10V | 2.5V @ 250μA | 2103pF @ 25V | 41nC @ 10V | 30.2ns | 54 ns | 64A | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 |
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分类:Transistors - FETs, MOSFETs - Arrays
